Dr. Vadym Zayetsv.zayets(at)gmail.com |
My Research and Inventions |
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Contentall pages of web site of Vadym Zayets (part 1): Basic Spin Properties of electronsLandau -Lifshitz Eq.; Spin-orbit interaction; Exchange interaction; Magneto-optics vs. spin; spin vs. orbital moment; What is a hole?; e-Drugs (Electronic drugs). PMA sensor.(part 2) Spin Properties of gas of conduction electronsSpin-polarized/ unpolarized electrons; Spin statistics; Spin Distribution of Conduction electron;. Electron gas of conduction electrons in Magnetic Field Pauli paramagnetism; conduction electrons in a ferromagentic metal(part 3) Spin TransportTransport Eqs.; Spin Proximity/ Spin Injection; Spin Detection; Boltzmann Eqs.; Mean-free path; Current near Interface; Non-local Spin Detection; Thermally-activated magnetization switching, Coercive field; Voltage- controlled magnetism (VCMA effect); ll-metal transistor Spin-orbit torque (SOT effect);(part 4) Current- induced magnetization reversal. Iteraction of groups of conduction electrons of different spin polarization; Spin-Torque Current. Spin-Transfer Torque; All-metal transistor; Spin-orbit torque (SOT effect); Voltage- controlled magnetism (VCMA effect); Parametric mechanism of Magnetization Reversal.(part 5) Family of Magneto- transport effects: Hall effect, Ordinary Hall effect; Anomalous Hall effect (AHE) Anisotropic magnetoresistance (AMR) and Planar Hall effect (making); Spin Hall effect; Inverse Spin Hall effect; Giant magnetic Resistance (GMR) effect. Spin- Dependent Conductivity;. Tunnel Magnetic Resistance (TMR).;Magnetic Tunnel Junction (MTJ) ; MgO-based MTJ; C(part 6) high- precision measurement method of magnetic and magneto- transport properties of nanomagnetsAccess to all my experimental data of nanomagnet measurement; Measurement of Inverse Spin Hall effect (ISHE); Measurement of spin polarization; Measurement of Coercive field, Retention time. parameter Δ , size of nucleation domain; RF measurements of magneto-transport effect;s Measurement of SOT-type in- plane magnetic field: " field- like torque" + "damp- like torque"; Measurement of Anisotropy field; Explaination of my EB nanotechnology;Access to Reticle data(part 7) old model of spin-up/down bands for the spin transport(The applications of this model are limited, because this model has some incorrect assumption)(part 8) High- speed optical memoryApplications; Operational principal; High-speed demultiplexing experiment; Reading method; High-Speed Spin Injection; Spin-photon memory with MTJ; Fabrication Technology; EB nano fabrication; Reticle 10 data(part 9) Magneto-optical effectOptical isolator Faraday rotation angle MCD Measurement of Isolation Kerr rotation High-precision measurement of non-linear refractive index and non-linear optical absorption Origin of Magneto-optics(part10) Transverse Magneto-Optical effectExperimental observation of transverse MO effect; Properties of transverse MO effect; Origin of transverse MO effect; Transverse Ellipticity; Two contributions to transverse MO effect; Magnetization-dependent optical loss; Calculations of transverse MO effect in the case of multilayer structure; Optical excitation of spin-polarized electrons utilizing transverse MO; Plasmons; Giant Enhancement of Transverse MO effect(part 11) Si Photonics. Plasmonic.Plasmonic isolator; Plasmonic modulator; Si nanowire fabrication technology; Si Photonics; Directional coupler; Integration of plasmonic + Si waveguides; ; III-V plasmonic;
(part 12) Personal DataCVPublicationsTechnologyDownloadsFake, Fraud and Highlight research
Basic Spin Properties of electronsBasic properties of electron spin. Spinors.Spin in a magnetic fieldSpin Precession. Precession Damping. Landau -Lifshitz equationWhat is the Spin?Spin-Orbit interactionExchange interactionsp-d exchange interactionPerpendicular magnetic anisotropy (PMA)e-Drugs (Electronic drugs). PMA sensor.What is a hole?Magneto-optics & Electron SpinOrbital moment. Quenching of orbital momentThermally-activated magnetization switching. Coercive field. Retention time. ΔHeating of a ferromagnet. Curie–Weiss law. Curie TemperatureAll-optical magnetization switching
Spin-dependent optical transitionVoltage- controlled magnetism (VCMA effect)Spin-orbit torque (SOT effect). Modulation of magnetic properties by electrical currentAll-metal transistor. All- metal LDPost- Standard and Standard Models of our Universe & SpinParameters of magnetic materials. MgO-based MTJ Spin Properties of gas of conduction electronsSpin-polarized/ unpolarized electronsSpin-dependent Scatterings between conduction electronsSpin statistics. Spin Distribution of Conduction electrons. Fermi-Dirac Energy distribution.Electron gas of conduction electrons in Magnetic FieldPauli paramagnetism. Pauli and Stoner models. Features and limitations.model comparison for spin distribution of the conduction electronsQuestions 1 & Answers (very old)Introduction (very old)Questions 2 & Answers (very old)
Spin TransportIntroductionTransport Eqs.Spin Proximity/ Spin InjectionSpin DetectionBoltzmann Eqs.Electrical current. Non-magnetic material (New)Electrical current. Magnetic materialScattering currentMean-free pathCurrent near InterfaceNon-local Spin Detection
Current- induced magnetization reversalSpin rotation of gas of conduction electrons Spin Torque for Conduction electrons. Iteraction of groups of conduction electrons of different spin polarizationSpin-Torque Current.Spin-Transfer TorqueAll-metal transistor. All- metal LDSpin-orbit torque (SOT effect). Modulation of magnetic properties by electrical currentVoltage- controlled magnetism (VCMA effect)Parametric mechanism of Magnetization Reversal. Parametric mechanism of Magnetization Reversal. Part.1: General.Parametric mechanism of Magnetization Reversal. Part 2. Parametric parameter : Current- induced magnetic field.Parametric mechanism of Magnetization Reversal. Part 3. Parametric parameter: Anisotropy field.Parametric mechanism of Magnetization Reversal. Part 4. Parametric parameter: Spin Injection
Family of Magneto- transport effects: Hall effect, AMR, spin-dependent conductivityFamily of Hall and AMR effectsOrdinary Hall effectAnomalous Hall effect (AHE)Anisotropic magnetoresistance/ Planar Hall effect (AMR/PHE)Spin Hall effectInverse Spin Hall effectGiant magnetic Resistance (GMR) effect. Spin- Dependent Conductivity.Tunnel Magnetic Resistance (TMR). Magnetic Tunnel Junction (MTJ)Parameters of magnetic materials. MgO-based MTJCharge accumulation at MTJ, at a contact between two metals
high- precision measurement method of magnetic and magneto- transport properties of nanomagnetsAll measurement Data . Properties of FeCoB nanomagnetsMeasurement methods of Magnetic properties of nanomagnets.Measurement of strength of Spin-Orbit InteractionMeasurement of Inverse Spin Hall effect (ISHE). Measurement of spin polarizationMeasurement of Coercive field, Retention time. parameter Δ , size of nucleation domainRF measurements of magneto-transport effectsMeasurement of SOT-type in- plane magnetic field: " field- like torque" + "damp- like torque"Measurement of Anisotropy fieldEB nanotechnologyReticle 11
old model of spin-up/down bands of the spin transport(The applications of this model are limited, because this model has some incorrect assumption)
IntroductionBasic Transport equationsSpin and charge currentsSpin drainNon-magnetic metalsFerromagnetic metalsSemiconductors (Basic)Threshold spin currentSpin gain/dampingSpin RelaxationSpin Hall/ Inverse Spin Hall effectsee- interactionHigh- speed optical memoryThis topic is about my development of high-speed non-volatile optical memory IntroductionApplicationsOperational principalHigh-speed demultiplexing experimentReadingHigh-Speed Spin InjectionSpin-photon memory with MTJFabrication TechnologyEB nano fabricationReticle 10Differential modulatorAll-optical magnetization switching
Magneto-optical effect
Optical isolatorFaraday rotation angleMCDMeasurement of IsolationKerr rotationHigh-precision measurement of non-linear refractive index and non-linear optical absorptionOrigin of Magneto-optics
Transverse Magneto-Optical effectIntroductionExperimental observation of transverse MO effectProperties of transverse MO effectOrigin of transverse MO effectTransverse EllipticityTwo contributions to transverse MO effectMagnetization-dependent optical lossCalculations of transverse MO effect in the case of multilayer structureOptical excitation of spin-polarized electrons utilizing transverse MOPlasmonsGiant Enhancement of Transverse MO effectHistory and Future
Silicon Photonics. Plasmonic
Si nanowire waveguideSi nanowire waveguide. Basic properties.Si nanowire fabrication technologyfiber/waveguide coupling setupdevices made of Si-waveguidesdirectional couplerAlGAAs passive waveguideAlGaAs waveguide (800 nm)AlGaAs waveguide (1550 nm)
PlasmonicPlasmonic. IntroductionMisconception about “plasmonic- friendly” and “plasmonic- unfriendly” metal materialintegration: plasmonic + Si waveguidesComparison of two technologies of Integration of Si nanowire waveguide and plasmonic waveguideOut-plane plasmonic confinementplasmonic isolatorIII-V plasmonicplasmonic on GaAs (800 nm)plasmonic on GaAs (1550 nm)plasmonic on Si (1550 nm)plasmons in metal stripin-plane confinement of plasmonssamples very old
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