Dr. Vadym Zayets
v.zayets(at)gmail.com
My Research and Inventions
click here to see all content |
Dr. Vadym Zayetsv.zayets(at)gmail.com |
|
|
more Chapters on this topic:IntroductionTransport Eqs.Spin Proximity/ Spin InjectionSpin DetectionBoltzmann Eqs.Band currentScattering currentMean-free pathCurrent near InterfaceOrdinary Hall effectAnomalous Hall effect, AMR effectSpin-Orbit interactionSpin Hall effectNon-local Spin DetectionLandau -Lifshitz equationExchange interactionsp-d exchange interactionCoercive fieldPerpendicular magnetic anisotropy (PMA)Voltage- controlled magnetism (VCMA effect)All-metal transistorSpin-orbit torque (SO torque)What is a hole?spin polarizationCharge accumulationMgO-based MTJMagneto-opticsSpin vs Orbital momentWhat is the Spin?model comparisonQuestions & AnswersEB nanotechnologyReticle 11
|
Reticle: SpinPhoton 10
TechnologyAbstract:It is for fabrication of the spin photon memoryThe field 1 (Marks) is used for magneto-transport and nano waveguides. resist: Marks: positive resist + lift-off. or negative resist + Ar milling is also possible. Top electrodes & back electrodes negative resist + lift-off.
Technology flowThe fabrication technology is also described here. Example 1 (basic)
starting film: i-GaAs(sub) :p-GaAs (30 nm):i-GaAs: n:GaAs:nn-InGaAs: Fe(3 nm):Ta(2 nm):Ru (2 nm) Step 1.(EB alignment marks) Field 1 (Marks) (positive resist)-> sputtering (Cr (5 nm) +Au (70 nm)+Cr(10 nm))-> lift-off alternative for better EB alignment but harder etching time adjustment: sputtering (Cr (5 nm) +Au (70 nm)+Cr(10 nm)-> Field 1 (Marks)(negative resist)-> Ar milling until Ru Step 2.(nanomagnets) EB nanomagnets (negative EB resist) -> Ar etching (till InGaAs ) ( the etching time is critically important)-> SiO2 sputtering (55 nm) -> lift-off Step 3 (nanoelectrodes). EB nanoelectrodes (positive EB resist) -> sputtering Cr (5 nm) +Au (30 nm) -> lift-off Step 4. top electrodes Field 2 (top electrodes) (negative resist)-> sputtering (Cr (5 nm) + Au 200 nm) -> lift-off Step 5. back electrodes Field 3 (back electrodes) (negative resist)->SiO2 wet etch (diluted BHF)-> GaAs wet etching ( until p-GaAs)->sputtering (Cr (5 nm) + Au 200 nm) -> lift-off
All fieldsdownload gds file of all fields:AllFields.gds download zip file of all fields for Lazi:Reticle 10 lazi.zip I recomend the use Lasi to check and design a reticle. It is very simple and powerful software. It is also free software. Download it here How to use Lasi. Simple tips. Click here to expand.
How to use Lasi 1. Download Lazi software from here. Install it in some directory (for example C:\Lasi7) 2. Unzip reticle in some directory (for example C:\reticles\reticle11\) 3. Right click the shortcut 1 field marks. In "taget" input your Lazi directory (for example C:\Lasi\lazi.exe). In "start in" input name of field 1 folder (for example "C:\reticles\reticle11\ 1 field marks") 4. left click on this shortcut. Lasi will open field 1. 5. Choose cell your want to see by pushing "load" or "list" 6. You can use fit (to see all cell) or zoom functions
How to make your first reticle 1) make folder with name of your field and shortcut 2) push load and input new name of your cell. For example, "waveguide". If it is simplest cell use rank 1. 3) Choose your layer (if you do not have, create one in Cnfg (Menu 2)). 4) choose your object. For rank 1 you have two options: Box or Poly/Path. 5) For example choose Box. 6) In cmd type add 20,1,-20, -1 and you have waveguide Next you can have waveguide with plasmon 7) Push "load". Name new layer "Plasmons". Use rank 2 8) Push Obj, choose "waveguide" (in a cell of rank 2, you can use all cells of rank 1) 9) Cmd, add 0,0. add 0, -5. And you have two waveguides 10) In Layer, choose another layer, which will be transperent. 11) Push Obj, choose Box. Push Cmd, add -1,1,1,-1. And you have a cut in one waveguide
Content
Field 1 EB marks
Field 2 Top electrodes
Field 3 back electrodes
Field 4 Capacitor
Field 5 Resistor
|
I will try to answer your questions as soon as possible
