Dr. Vadym Zayetsv.zayets(at)gmail.com |
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more Chapters on this topic:IntroductionTransport Eqs.Spin Proximity/ Spin InjectionSpin DetectionBoltzmann Eqs.Band currentScattering currentMean-free pathCurrent near InterfaceOrdinary Hall effectAnomalous Hall effect, AMR effectSpin-Orbit interactionSpin Hall effectNon-local Spin DetectionLandau -Lifshitz equationExchange interactionsp-d exchange interactionCoercive fieldPerpendicular magnetic anisotropy (PMA)Voltage- controlled magnetism (VCMA effect)All-metal transistorSpin-orbit torque (SO torque)What is a hole?spin polarizationCharge accumulationMgO-based MTJMagneto-opticsSpin vs Orbital momentWhat is the Spin?model comparisonQuestions & AnswersEB nanotechnologyReticle 11
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Reticle: SpinTransport 11
TechnologyAbstract:It is for measearing basic properties of metal film. Resistance, contact resistance, Hall angle, capacitance,3 termianal magnetization reversalresist: All fields were designed for positive resist + lift-off. Usage of negative resist + Ar milling is also possible.
Technology flowExample 1 (basic, no EB) capacitors, MTJ, spin transistor, Hall bars, resistance, Spin Hall torque starting film: Si:SiO2:FeGa(10 nm):MgO(1 nm):FeB (10nm) (the structure is oversimplified) Step 1. Field 3 (Hall Bars) -> Ar etching till SiO2 -> SiO2 sputtering (25 nm) (planarization+protection from oxidation) -> lift-off Step 2. Field 5 (Voltage electrodes) -> Ar etching (till middle of MgO or tillFeGa )-> SiO2 sputtering (40 nm) -> lift-off Step 3. Field 4 (contacts) -> Ar etching ( till FeGa (through 40 nm of SiO2 + or remaining MgO))-> sputtering (Cr (5 nm) + Au 70 nm) -> lift-off Step 4. Field 2 (top electrodes) ->-> sputtering (Cr (5 nm) + Au 200 nm) -> lift-off Example 2 (simple & quick) only Hall bars, resistance, contact resistance starting film: Si:SiO2:FeGa(10 nm):MgO(1 nm):FeB (10nm) (oversimplified) Step 1. Field 3 (Hall Bars) -> Ar etching till SiO2 -> SiO2 sputtering (25 nm) (planarization+protection from oxidation) -> lift-off Step 2. Field 2 (top electrodes) ->-> sputtering (Cr (5 nm) + Au 200 nm) -> lift-off
All fieldsdownload gds file of all fields:AllFields.gds download zip file of all fields for Lazi:Reticle 11 lazi.zip I recomend the use Lasi to check and design a reticle. It is very simple and powerful software. It is also free software. Download it here How to use Lasi. Simple tips. Click here to expand.
How to use Lasi 1. Download Lazi software from here. Install it in some directory (for example C:\Lasi7) 2. Unzip reticle in some directory (for example C:\reticles\reticle11\) 3. Right click the shortcut 1 field marks. In "taget" input your Lazi directory (for example C:\Lasi\lazi.exe). In "start in" input name of field 1 folder (for example "C:\reticles\reticle11\ 1 field marks") 4. left click on this shortcut. Lasi will open field 1. 5. Choose cell your want to see by pushing "load" or "list" 6. You can use fit (to see all cell) or zoom functions
How to make your first reticle 1) make folder with name of your field and shortcut 2) push load and input new name of your cell. For example, "waveguide". If it is simplest cell use rank 1. 3) Choose your layer (if you do not have, create one in Cnfg (Menu 2)). 4) choose your object. For rank 1 you have two options: Box or Poly/Path. 5) For example choose Box. 6) In cmd type add 20,1,-20, -1 and you have waveguide Next you can have waveguide with plasmon 7) Push "load". Name new layer "Plasmons". Use rank 2 8) Push Obj, choose "waveguide" (in a cell of rank 2, you can use all cells of rank 1) 9) Cmd, add 0,0. add 0, -5. And you have two waveguides 10) In Layer, choose another layer, which will be transperent. 11) Push Obj, choose Box. Push Cmd, add -1,1,1,-1. And you have a cut in one waveguide
Content
Field 1 EB marks
Field 2 Top electrodes
Field 3 Hall barseb marks are included Field 4 Contacts
Field 5 Voltage electrodes
DevicesHall barsClick on image to enlarge it.
Modulated Iterface Anisotropy
Electrical control of iterface anisotropy
MTJ
4-point resistance
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