Dr. Vadym Zayets

Plasmonic waveguide fabricated first, only stepper was used

 

Fabrication technology.

PCVD of aSi : Nov. 2012 (Thank you to Matsui-san)

 

Plasmonic waveguide 2012 12 06

 

 

 

 

 

 

 

 

 

 

 

ICP RIE etch

2+3+41+9 (3 times)

Fe(55' :200 W 73 nm) Au (100 W 8' 118 nm)

Au 400 nm +Cr 10 nm lift off 30 n7

Purpose of the Cr on top is to avoid plasmons at Au/SiO2 interface

 

thicknesses SEM checked

top SiO2=85 nm; aSi=270 nm; thermo SiO2=1 um

 

Waveguide technology 2012 12 18

 

 

 

Pr. N 14 90+9+(2+3+41+9)(3 times)

90: 100W 5 Pa 20” CHF3

2: 80 W 5 Pa 20” SF6: CHF3 (9:0.5)

3; 80/20 W 5 Pa 35” SF6: CHF3 (5:0.5)

9: wait 2’

41: 1 Pa 80/20 W 20 “ O2: CHF3(0.5:5)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Measurements