Si wire waveguide Research V.Zayets

Sample: D61

AlGaAs waveguide integrated with Co plasmonic waveguide(wavelength=1550 nm)

Plasmonic waveguide were fabricated first, only stepper was used. Thin SiO2. Problem with dielectric waveguides (BCl dry etching)

Fabrication technology.

MBE growth on 2012 10 05

Plasmonic waveguide

wet-etch (AlGaAs;300nm; 2’20”)

sputter (SiO2(12nm;100w; 6’36”) → Co(56nm?; 40’; 100W; Ar 32sccm; 0.7Pa) → Au(300nm; 100W; 18’) )

jetliftoff

sputter (SiO2: 100nm; 200W )jetliftoff (nozzle 28mm)ICP@bcr (#6; AlGaAs: 450nm; 5’8”; 150w/50w; 1Pa)

sputter (SiO2: 100nm; 200w; 28min)

cross-sectional SEM of plasmonic waveguide. 2012 10 31. There is an intermixture of Au and Co

Waveguide technology

There was a problem of waveguide fabrication. BCl etching rate of SiO2 was unexpectedly fast.

Monolithical Integration

Top SEM view of integrated a-Si waveguide and Al/Au plasmonic waveguides. 2013 01 18. (right) plasmonic waveguides of different length. (left) Contact between plasmonic waveguide and a-Si waveguides

Dr. Vadym Zayets

v.zayets(at)gmail.com

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Introduction

AlGaAs waveguide (800 nm)

AlGaAs waveguide integrated with Co plasmonic waveguide(wavelength=1550 nm)

Plasmonic waveguide were fabricated first, only stepper was used. Thin SiO2. Problem with dielectric waveguides (BCl dry etching)

Fabrication technology.

Monolithical Integration

Measurements

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