Si wire waveguide Research V.Zayets

Sample: D58

AlGaAs waveguide integrated with Fe plasmonic waveguide(wavelength=1550 nm)

Plasmonic waveguide were fabricated first, only stepper was used. Double-dielectric. Thin SiO2.

Fabrication technology.

MBE growth on 2012 10 05 on double holder with D61. SEM film thickness 3600 nm.

Plasmonic waveguide

wet-etch need to etch 450 nm 3'45" etching (need 3'30" because of winter)

SiO2 11 nm (6' 100 W) Fe (55'? :200 W): Au (100 W 8')

Au 400 nm +cr 10 nm

AlGaAs waveguide wet etching 3'45". mistake. etching depth 1500 nm

cross-sectional SEM of plasmonic waveguide. 2013 02 04. There is an intermixture of Au and Co

cross-sectional SEM of AlGAAs waveguide. 2013 02 04

Waveguide technology

There was a problem of waveguide fabrication. BCl etching rate of SiO2 was unexpectedly fast.

Monolithical Integration

Integration of plasmonic and dielectric waveguide. The SEM images taken across the dielectric and plasmonic waveguides are in the same scale and aligned. The positions, where light is propagates, are shown.

Measurements

optical microscope image of cleaved edge of AlGaAs waveguide (left) without coupled light (right) light been transitted through AlGaAs waveguides and the plasmonic waveguides.

Fiber-to-fiber transmission as function of wavelength.

Fiber-to-fiber transmission at visible wavelengthes. Fibers and AlGaAs waveguides was for 1550 nm. The transmission is not calibrated. It may be 5-10 dB smaller

Dr. Vadym Zayets

v.zayets(at)gmail.com

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Introduction

AlGaAs waveguide (800 nm)

AlGaAs waveguide integrated with Fe plasmonic waveguide(wavelength=1550 nm)

Plasmonic waveguide were fabricated first, only stepper was used. Double-dielectric. Thin SiO2.

Fabrication technology.

Monolithical Integration

Measurements

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