Dr. Vadym Zayetsv.zayets(at)gmail.com |
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Sample: D61
AlGaAs waveguide integrated with Co plasmonic waveguide(wavelength=800 nm)Plasmonic waveguide were fabricated first, electronic lithography (EB) was used. Problem with dielectric waveguides (BCl dry etching)
Fabrication technology.MBE growth on 2010 12
Plasmonic waveguide sputter (SiO2 (6nm;100w, 3’20”) →Co( 70-85nm?; 30min; 200W;Ar 43sccm;0.7Pa )→ Au(200nm;100W;13min)) jetliftoff sputter (SiO2: 100nm; 200W )jetliftoff (nozzle 28mm)ICP@bcr (#6; AlGaAs: 215nm; 2’30”; 150w/50w; 1Pa) sputter (SiO2: 100nm; 200w; 28min)
I Waveguide technology
There was a problem of waveguide fabrication. BCl etching rate of SiO2 was unexpectedly fast.
Monolithical Integration
Measurements
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I will try to answer your questions as soon as possible