My Research and Inventions

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Introduction

Si nanowire fabrication technology

fiber/waveguide coupling setup

devices made of Si-waveguides

directional coupler

integration: plasmonic + Si waveguides

two technology of integration

Out-plane plasmonic confinement

plasmonic isolator

III-V plasmonic

AlGaAs waveguide (800 nm)

AlGaAs waveguide (1550 nm)

Si wire waveguide (1550 nm)

plasmonic on GaAs (800 nm)

plasmonic on GaAs (1550 nm)

plasmonic on Si (1550 nm)

plasmons in metal strip

in-plane confinement of plasmons

samples very old

 

 
Sample: B3

AlGaAs waveguide integrated with Fe plasmonic waveguide(wavelength=1550 nm)

Plasmonic waveguide were fabricated first, only stepper was used. Double-dielectric. Thin SiO2. Top of AlgaAs was oxidize. The quality is not good.

 

Fabrication technology.

MBE growth on 2010 06 11. Core x=0.315 870 nm, Clad x=0.5 1440 nm

 

Fabrication technology is the same as for D58

Plasmonic waveguide

 

wet-etch need to etch 900 nm 6'45" etching (need 3'30" because of winter)

SiO2 12 nm (8' 100 W) Fe (40' :200 W): Au (100 W 8')

Au 400 nm +cr 10 nm

AlGaAs waveguide wet etching 3'45" 470 nm (half of core)

cross-sectional SEM of plasmonic waveguide. 2013 02 04

 

 

 

 

 

 

 

 

 

 

 

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Waveguide technology

 

cross-sectional SEM of AlGaAs waveguide. 2013 02 04

 

 

 

 

 

 

 

 

 

Monolithical Integration

 

 

 

 

 

 

 

 

 

 

 

 

Measurements

 

 

 

I truly appreciate your comments, feedbacks and questions

I will try to answer your questions as soon as possible

 

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